No. |
Part Name |
Description |
Manufacturer |
31 |
AD1996 |
Class-D Audio Power Amplifier – 2 × 40W |
Analog Devices |
32 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
33 |
BD241 |
3A Complementary silicon plastic 40W power NPN transistor |
Motorola |
34 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
35 |
BD241A |
3A Complementary silicon plastic 40W power NPN transistor |
Motorola |
36 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
37 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
38 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
39 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
40 |
BD241C |
Power 3A 100V NPN 40W |
ON Semiconductor |
41 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
42 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
43 |
BD242 |
3A Complementary silicon plastic 40W power PNP transistor |
Motorola |
44 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
45 |
BD242A |
3A Complementary silicon plastic 40W power PNP transistor |
Motorola |
46 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
47 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
48 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
49 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
50 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
51 |
BD561 |
4A medium power transistor NPN silicon 40V 40W |
Motorola |
52 |
BD562 |
4A medium power transistor PNP silicon 40V 40W |
Motorola |
53 |
D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL |
SemeLAB |
54 |
D2082 |
TetraFET 40W - 28V - 1.0GHz |
SemeLAB |
55 |
D2082UK |
TetraFET 40W - 28V - 1.0GHz |
SemeLAB |
56 |
D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
SemeLAB |
57 |
DU2840S |
2-175 MHz, 40W, 28V, RF MOSFET power transistor |
MA-Com |
58 |
FL2-40100 |
OutputV:2Vdc; inputV:85-264V; 15A; 40W; FlatPAC-EN: EN compliant, autoranging switcher |
Vicor Corporation |
59 |
FL2-40160 |
OutputV:2Vdc; inputV:85-264V; 15A; 40W; EN compliant autoranging switcher |
Vicor Corporation |
60 |
FL2-4050 |
OutputV:2Vdc; inputV:85-264V; 15A; 40W; EN compliant autoranging switcher |
Vicor Corporation |
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