No. |
Part Name |
Description |
Manufacturer |
31 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
32 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
33 |
2N6288 |
NPN silicon DURAWATT™ POWER transistor 40W/7A |
National Semiconductor |
34 |
2N6290 |
NPN silicon DURAWATT™ POWER transistor 40W/7A |
National Semiconductor |
35 |
2N6292 |
NPN silicon DURAWATT™ POWER transistor 40W/7A |
National Semiconductor |
36 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
37 |
2N6368 |
NPN silicon RF power transistor 40W (PEP) 30MHz |
Motorola |
38 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
39 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
40 |
2SB776 |
PNP Epitaxial Planar Silicon Transistor 100V/7A, AF 40W Output Applications |
SANYO |
41 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
42 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
43 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
44 |
2SC3562 |
10A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
45 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
46 |
2SC3625 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
47 |
2SD896 |
NPN Triple Diffused Planar Silicon Transistor 100V/7A, AF 40W Output Applications |
SANYO |
48 |
AD1996 |
Class-D Audio Power Amplifier – 2 × 40W |
Analog Devices |
49 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
50 |
BD241 |
3A Complementary silicon plastic 40W power NPN transistor |
Motorola |
51 |
BD241 |
NPN Silicon Power Transistor 40W |
National Semiconductor |
52 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
53 |
BD241A |
3A Complementary silicon plastic 40W power NPN transistor |
Motorola |
54 |
BD241A |
NPN Silicon Power Transistor 40W |
National Semiconductor |
55 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
56 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
57 |
BD241B |
NPN Silicon Power Transistor 40W |
National Semiconductor |
58 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
59 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
60 |
BD241C |
NPN Silicon Power Transistor 40W |
National Semiconductor |
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