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Datasheets for 40W

Datasheets found :: 256
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 AD1996 Class-D Audio Power Amplifier – 2 × 40W Analog Devices
32 BD241 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. General Electric Solid State
33 BD241 3A Complementary silicon plastic 40W power NPN transistor Motorola
34 BD241A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. General Electric Solid State
35 BD241A 3A Complementary silicon plastic 40W power NPN transistor Motorola
36 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
37 BD241B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. General Electric Solid State
38 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
39 BD241C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. General Electric Solid State
40 BD241C Power 3A 100V NPN 40W ON Semiconductor
41 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
42 BD242 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. General Electric Solid State
43 BD242 3A Complementary silicon plastic 40W power PNP transistor Motorola
44 BD242A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. General Electric Solid State
45 BD242A 3A Complementary silicon plastic 40W power PNP transistor Motorola
46 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
47 BD242B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. General Electric Solid State
48 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
49 BD242C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. General Electric Solid State
50 BD242C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
51 BD561 4A medium power transistor NPN silicon 40V 40W Motorola
52 BD562 4A medium power transistor PNP silicon 40V 40W Motorola
53 D1024UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL SemeLAB
54 D2082 TetraFET 40W - 28V - 1.0GHz SemeLAB
55 D2082UK TetraFET 40W - 28V - 1.0GHz SemeLAB
56 D2208UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL SemeLAB
57 DU2840S 2-175 MHz, 40W, 28V, RF MOSFET power transistor MA-Com
58 FL2-40100 OutputV:2Vdc; inputV:85-264V; 15A; 40W; FlatPAC-EN: EN compliant, autoranging switcher Vicor Corporation
59 FL2-40160 OutputV:2Vdc; inputV:85-264V; 15A; 40W; EN compliant autoranging switcher Vicor Corporation
60 FL2-4050 OutputV:2Vdc; inputV:85-264V; 15A; 40W; EN compliant autoranging switcher Vicor Corporation


Datasheets found :: 256
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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