No. |
Part Name |
Description |
Manufacturer |
1 |
135D |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to + 200°C Operation |
Vishay |
2 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
3 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
4 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
5 |
1N4811A |
Diode VAR Cap Single 55V 47pF 2-Pin DO-7 |
New Jersey Semiconductor |
6 |
1N5653 |
Diode TVS Single Uni-Dir 55.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
7 |
1N5921 |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
8 |
1N5921A |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
9 |
1N5921C |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
10 |
1N5921D |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
11 |
1N6059 |
Diode TVS Single Bi-Dir 55V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
12 |
1N6291 |
Diode TVS Single Uni-Dir 55.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
13 |
1N6291C |
Diode TVS Single Bi-Dir 55.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
14 |
1S20 550 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
15 |
1S40 550 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
16 |
1S60 550 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
17 |
1S61 550 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
18 |
23A017 |
Trans GP BJT NPN 50V 0.8A 3-Pin Case 55BT-2 |
New Jersey Semiconductor |
19 |
2N1480 |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
20 |
2N1482 |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
21 |
2N1482/S |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
22 |
2N1484 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8 |
New Jersey Semiconductor |
23 |
2N1486 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8 |
New Jersey Semiconductor |
24 |
2N3054 |
4 Ampere power transistor 55 Volts 25 Watts |
Motorola |
25 |
2N3054 |
Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
26 |
2N3054A |
4 Ampere power transistor 55 Volts 75 Watts |
Motorola |
27 |
2N3054A |
Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
28 |
2N3677 |
Trans GP BJT NPN 55V 3-Pin TO-39 |
New Jersey Semiconductor |
29 |
2N5492 |
Trans GP BJT NPN 55V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
30 |
2N6049 |
Trans GP BJT PNP 55V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
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