| No. |
Part Name |
Description |
Manufacturer |
| 1 |
135D |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to + 200°C Operation |
Vishay |
| 2 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 3 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 4 |
1N4811A |
Diode VAR Cap Single 55V 47pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 5 |
1N5653 |
Diode TVS Single Uni-Dir 55.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 6 |
1N5921 |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5921A |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N5921C |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N5921D |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N6059 |
Diode TVS Single Bi-Dir 55V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 11 |
1N6291 |
Diode TVS Single Uni-Dir 55.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12 |
1N6291C |
Diode TVS Single Bi-Dir 55.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13 |
23A017 |
Trans GP BJT NPN 50V 0.8A 3-Pin Case 55BT-2 |
New Jersey Semiconductor |
| 14 |
2N1480 |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 15 |
2N1482 |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 16 |
2N1482/S |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 17 |
2N1484 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8 |
New Jersey Semiconductor |
| 18 |
2N1486 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8 |
New Jersey Semiconductor |
| 19 |
2N3054 |
4 Ampere power transistor 55 Volts 25 Watts |
Motorola |
| 20 |
2N3054 |
Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 21 |
2N3054A |
4 Ampere power transistor 55 Volts 75 Watts |
Motorola |
| 22 |
2N3054A |
Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 23 |
2N3677 |
Trans GP BJT NPN 55V 3-Pin TO-39 |
New Jersey Semiconductor |
| 24 |
2N5492 |
Trans GP BJT NPN 55V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 25 |
2N6049 |
Trans GP BJT PNP 55V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 26 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
| 27 |
2N6714 |
0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
| 28 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
| 29 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
| 30 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
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