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Datasheets for 55

Datasheets found :: 2475
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No. Part Name Description Manufacturer
31 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
32 2N6714 0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE Continental Device India Limited
33 2N6715 0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE Continental Device India Limited
34 2N6726 0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE Continental Device India Limited
35 2N6727 0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE Continental Device India Limited
36 2SA1120 Trans GP BJT PNP 55V 0.1A 3-Pin TO-92-B1 New Jersey Semiconductor
37 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
38 2SA843 Trans GP BJT PNP 55V 0.1A 3-Pin TO-92 New Jersey Semiconductor
39 2SB1035 900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 Isahaya Electronics Corporation
40 2SC2652 V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications TOSHIBA
41 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation
42 2SC3244 900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 Isahaya Electronics Corporation
43 2SC3438 500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 Isahaya Electronics Corporation
44 2SC4357 500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. Isahaya Electronics Corporation
45 2SC5210 500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. Isahaya Electronics Corporation
46 2SD1447 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 Isahaya Electronics Corporation
47 3B44 Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module Analog Devices
48 3B44-00 Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module Analog Devices
49 3B44-01 Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module Analog Devices
50 3B44-02 Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module Analog Devices
51 3B44-CUSTOM Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module Analog Devices
52 5962-9232501MXA 3A, 55V H-Bridge National Semiconductor
53 5962-9232501MXA 3A, 55V H-Bridge National Semiconductor
54 5962-9232501MXA 2.4A, 55V H-Bridge 24-CDIP SB -55 to 125 Texas Instruments
55 5962-9232501VXA 3A/ 55V H-Bridge National Semiconductor
56 5962F0151601QXA Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
57 5962F0151601QXC Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
58 5962F0151601QXX Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
59 5962F0151601QYA Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
60 5962F0151601QYC Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). Aeroflex Circuit Technology


Datasheets found :: 2475
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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