No. |
Part Name |
Description |
Manufacturer |
31 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
32 |
2N6714 |
0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
33 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
34 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
35 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
36 |
2SA1120 |
Trans GP BJT PNP 55V 0.1A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
37 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
38 |
2SA843 |
Trans GP BJT PNP 55V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
39 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
40 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
41 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
42 |
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 |
Isahaya Electronics Corporation |
43 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
44 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
45 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
46 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
47 |
3B44 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
48 |
3B44-00 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
49 |
3B44-01 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
50 |
3B44-02 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
51 |
3B44-CUSTOM |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
52 |
5962-9232501MXA |
3A, 55V H-Bridge |
National Semiconductor |
53 |
5962-9232501MXA |
3A, 55V H-Bridge |
National Semiconductor |
54 |
5962-9232501MXA |
2.4A, 55V H-Bridge 24-CDIP SB -55 to 125 |
Texas Instruments |
55 |
5962-9232501VXA |
3A/ 55V H-Bridge |
National Semiconductor |
56 |
5962F0151601QXA |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
57 |
5962F0151601QXC |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
58 |
5962F0151601QXX |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
59 |
5962F0151601QYA |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
60 |
5962F0151601QYC |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
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