| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP160A |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 2 |
15KP160CA |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 3 |
15KP58 |
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 4 |
15KP58A |
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5 |
15KP58C |
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 6 |
15KP58CA |
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 7 |
15KPA58 |
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 8 |
15KPA58A |
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 9 |
15KPA58C |
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 10 |
15KPA58CA |
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 11 |
1N1323 |
150mW Zener diode 58V |
Motorola |
| 12 |
1N1323A |
150mW Zener diode 58V |
Motorola |
| 13 |
1N5653A |
Diode TVS Single Uni-Dir 58.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 14 |
1N5653AH |
Diode TVS Single Uni-Dir 58.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 15 |
1N6059A |
Diode TVS Single Bi-Dir 58V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 16 |
1N6291A |
Diode TVS Single Uni-Dir 58.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 17 |
2322 58. . . . . . |
High Surge Suppression Varistors |
Vishay |
| 18 |
30KP58 |
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 19 |
30KP58A |
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 20 |
30KP58C |
Diode TVS Single Bi-Dir 58V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 21 |
30KP58CA |
Diode TVS Single Bi-Dir 58V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 22 |
30KPA58 |
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 23 |
30KPA58A |
Diode TVS Single Uni-Dir 58V 30KW 2-Pin |
New Jersey Semiconductor |
| 24 |
30KPA58C |
Diode TVS Single Bi-Dir 58V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 25 |
30KPA58CA |
Diode TVS Single Bi-Dir 58V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 26 |
5KP58 |
Diode TVS Single Uni-Dir 58V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 27 |
5KP58A |
Diode TVS Single Uni-Dir 58V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 28 |
5KP58C |
Diode TVS Single Bi-Dir 58V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 29 |
5KP58CA |
Diode TVS Single Bi-Dir 58V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 30 |
ADS8381I |
18-BIT, 580-kHz, UNIPOLAR INPUT, MICRO POWER SAMPLING ANALOG-TO-DIGITAL CONVERTER WITH PARALLEL INTERFACE |
Texas Instruments |
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