No. |
Part Name |
Description |
Manufacturer |
61 |
FDP16AN08A0 |
N-Channel PowerTrench � MOSFET 75V, 58A, 16mOhm |
Fairchild Semiconductor |
62 |
LM96-1/5-LENS-KIT |
LM9630 100 x 128, 580 fps Ultra Sensitive Monochrome CMOS Image Sensor |
National Semiconductor |
63 |
LM9630 |
100 x 128, 580 fps Ultra Sensitive Monochrome CMOS Image Sensor |
National Semiconductor |
64 |
LM9630BIEA |
LM9630 100 x 128 / 580 fps Ultra Sensitive Monochrome CMOS Image Sensor |
National Semiconductor |
65 |
LM9630EVAL-KIT |
LM9630 100 x 128 / 580 fps Ultra Sensitive Monochrome CMOS Image Sensor |
National Semiconductor |
66 |
LM9630HEADBOARD |
LM9630 100 x 128 / 580 fps Ultra Sensitive Monochrome CMOS Image Sensor |
National Semiconductor |
67 |
LM9630SAMPLE-KIT |
LM9630 100 x 128 / 580 fps Ultra Sensitive Monochrome CMOS Image Sensor |
National Semiconductor |
68 |
LPC2365FBD100 |
ARM7 with 256 kB flash, 58 kB SRAM, Ethernet and 10-bit ADC |
NXP Semiconductors |
69 |
LPC2366FBD100 |
ARM7 with 256 kB flash, 58 kB SRAM, Ethernet, USB 2.0 Device, CAN, and 10-bit ADC |
NXP Semiconductors |
70 |
LPC2367FBD100 |
ARM7 with 512 kB flash, 58 kB SRAM, Ethernet and 10-bit ADC |
NXP Semiconductors |
71 |
LPC2368FBD100 |
ARM7 with 512 kB flash, 58 kB SRAM, Ethernet, USB 2.0 Device, CAN, SD/MMC, and 10-bit ADC |
NXP Semiconductors |
72 |
LPC2368FET100 |
ARM7 with 512 kB flash, 58 kB SRAM, Ethernet, USB 2.0 Device, CAN, SD/MMC, and 10-bit ADC |
NXP Semiconductors |
73 |
LPC2377FBD144 |
ARM7 with 512KB flash, 58 KB SRAM, Ethernet, and 10-bit ADC |
NXP Semiconductors |
74 |
LPC2378FBD144 |
ARM7 with 512KB flash, 58 KB SRAM, Ethernet, USB 2.0 Device, CAN, and 10-bit ADC |
NXP Semiconductors |
75 |
MAX1069AEUD |
0.3-6V; 58.6ksps, 14-bit, 2-wire serial 8-bit serial ADC. For hand-held portable applications, medical instrumnets, battery-powered test equipment, solar-powered remote systems, received-signal-strength indicators, system supervision |
MAXIM - Dallas Semiconductor |
76 |
MAX1069BEUD |
0.3-6V; 58.6ksps, 14-bit, 2-wire serial 8-bit serial ADC. For hand-held portable applications, medical instrumnets, battery-powered test equipment, solar-powered remote systems, received-signal-strength indicators, system supervision |
MAXIM - Dallas Semiconductor |
77 |
MAX1069CEUD |
0.3-6V; 58.6ksps, 14-bit, 2-wire serial 8-bit serial ADC. For hand-held portable applications, medical instrumnets, battery-powered test equipment, solar-powered remote systems, received-signal-strength indicators, system supervision |
MAXIM - Dallas Semiconductor |
78 |
MAX4174BFEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 25, 1+ (Rf/Dg) noninverting gain 26, -3dB BW 580kHz. |
MAXIM - Dallas Semiconductor |
79 |
MAX4175BFEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 25, 1+ (Rf/Dg) noninverting gain 26, -3dB BW 580kHz. |
MAXIM - Dallas Semiconductor |
80 |
MAX4274BFESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 25, 1+ (Rf/Dg) noninverting gain 26, -3dB BW 580kHz. |
MAXIM - Dallas Semiconductor |
81 |
MAX4274BFEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 25, 1+ (Rf/Dg) noninverting gain 26, -3dB BW 580kHz. |
MAXIM - Dallas Semiconductor |
82 |
MAX4275BFESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 25, 1+ (Rf/Dg) noninverting gain 26, -3dB BW 580kHz. |
MAXIM - Dallas Semiconductor |
83 |
MAX4275BFEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 25, 1+ (Rf/Dg) noninverting gain 26, -3dB BW 580kHz. |
MAXIM - Dallas Semiconductor |
84 |
MT2035-YG |
Rectangular 2 leaded tri-state LED lamp. Lens color white diff. Peak wavelength (nm) 585(Y), 567(G). Luminous intensity typ.(mcd) @ 20mA 3.6(Y), 4.5(G). |
Marktech Optoelectronics |
85 |
MTSM4415-YG |
Surface mount LED lamp. Emitting color yellow/green. Resin color water clear. Luminous intensity(mcd) 3.0(typ) @20mA. Peak emission waveiength(typ) 585/565 nm. |
Marktech Optoelectronics |
86 |
NTD4809N |
Power MOSFET, 30 V, 58 A, Single N-Channel |
ON Semiconductor |
87 |
NTD4809NH |
Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK |
ON Semiconductor |
88 |
NTD4959N |
Power MOSFET 30 V, 58 A 9mOhm, Single, N-Channel DPAK |
ON Semiconductor |
89 |
NTE5175A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 580mA. |
NTE Electronics |
90 |
NTMFS4821N |
Power MOSFET, 30 V, 58.5 A, Single N-Channel |
ON Semiconductor |
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