| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1503-60A |
Max delay 60 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 2 |
1503-60B |
Max delay 60 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 3 |
1503-60C |
Max delay 60 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 4 |
1503J-60H |
Max delay 60 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 5 |
1504-60A |
Delay 60 +/-3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
1504-60B |
Delay 60 +/-3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 7 |
1504-60C |
Delay 60 +/-3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 8 |
1504-60E |
Delay 60 +/-3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 9 |
1505-60A |
Delay 60 +/-3 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 10 |
1505-60B |
Delay 60 +/-3 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 11 |
1505-60C |
Delay 60 +/-3 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 12 |
1513-60A |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 13 |
1513-60B |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 14 |
1513-60Y |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 15 |
1514-60A |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 16 |
1514-60B |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 17 |
1514-60Y |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 18 |
1515-60A |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 19 |
1515-60Y |
Delay 60 +/-3 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 20 |
1N270JTXV |
100 V, 60 mA, gold bonded germanium diode |
BKC International Electronics |
| 21 |
1N5264AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-10%. |
Microsemi |
| 22 |
1N5264BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-5%. |
Microsemi |
| 23 |
1N5264UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. |
Microsemi |
| 24 |
2N2484HR |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
| 25 |
2N2484HRG |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
| 26 |
2N2484HRT |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
| 27 |
2N2484UB1 |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
| 28 |
2N2484UBG |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
| 29 |
2N2484UBT |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
| 30 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
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