No. |
Part Name |
Description |
Manufacturer |
31 |
2N2907AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
32 |
2N2907AHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
33 |
2N2907AHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
34 |
2N2907ARHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
35 |
2N2907ARHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
36 |
2N2907ARUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
37 |
2N2907ARUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
38 |
2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
39 |
2N2907AUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
40 |
2N2907AUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
41 |
2N3055 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
42 |
2N3055_MJ2955 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
43 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
44 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
45 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
46 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
47 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
48 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
49 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
50 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
51 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
52 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
53 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
54 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
55 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
56 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
57 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
58 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
59 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
60 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
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