No. |
Part Name |
Description |
Manufacturer |
1 |
1N5264AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-10%. |
Microsemi |
2 |
1N5264BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-5%. |
Microsemi |
3 |
1N5264UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. |
Microsemi |
4 |
2N2484HR |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
5 |
2N2484HRG |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
6 |
2N2484HRT |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
7 |
2N2484UB1 |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
8 |
2N2484UBG |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
9 |
2N2484UBT |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
10 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
11 |
2N2907AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
12 |
2N2907AHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
13 |
2N2907AHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
14 |
2N2907ARHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
15 |
2N2907ARHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
16 |
2N2907ARUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
17 |
2N2907ARUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
18 |
2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
19 |
2N2907AUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
20 |
2N2907AUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
21 |
2N3055 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
22 |
2N3055_MJ2955 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
23 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
24 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
25 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
26 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
27 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
28 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
29 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
30 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
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