No. |
Part Name |
Description |
Manufacturer |
61 |
AQZ207V |
Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 60 V AC, 85 V DC, load current 1.0 A. |
Matsushita Electric Works(Nais) |
62 |
AQZ262 |
Power photoMOS relay (high capacity type). AC/DC type. Output rating: load voltage 60 V, load current 6.0 A. |
Matsushita Electric Works(Nais) |
63 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
64 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
65 |
BD168 |
PNP silicon power transistor. 1.5 A, 60 V, 20 W. |
Motorola |
66 |
BD189 |
NPN silicon power transistor. 4 A, 60 V, 40 W. |
Motorola |
67 |
BD236 |
NPN silicon power transistor. 2 A, 60 V, 25 W. |
Motorola |
68 |
BD439 |
Plastic medium power silicon NPN transistor. 4 A, 60 V. |
Motorola |
69 |
BD517-1 |
NPN silicon amplifier transistor. 10 W, 60 V. |
Motorola |
70 |
BD517-5 |
NPN silicon amplifier transistor. 10 W, 60 V. |
Motorola |
71 |
BD518 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
72 |
BD518-1 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
73 |
BD518-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
74 |
BD525-1 |
NPN silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
75 |
BD525-5 |
NPN silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
76 |
BD526-1 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
77 |
BD526-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
78 |
BD535 |
complementary silicon NPN plastic power transistor. 60 V, 4 A, 50 W. |
Motorola |
79 |
BD536 |
complementary silicon PNP plastic power transistor. 60 V, 4 A, 50 W. |
Motorola |
80 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
81 |
BD897 |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
82 |
BD897A |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
83 |
BS170 |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
84 |
BS170-D |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92 |
ON Semiconductor |
85 |
BS170G |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
86 |
BS170RL1 |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
87 |
BS170RLRA |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
88 |
BS170RLRM |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
89 |
BS170RLRP |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
90 |
BS170ZL1 |
Small Signal MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
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