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Datasheets for 65

Datasheets found :: 1859
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 15KP130 Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. Panjit International Inc
2 15KP130C Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. Panjit International Inc
3 1N5139B Diode VAR Cap Single 65V 6.8pF 2-Pin DO-7 New Jersey Semiconductor
4 1N5141B Diode VAR Cap Single 65V 12pF 2-Pin DO-7 New Jersey Semiconductor
5 1N5144C Diode VAR Cap Single 65V 22pF 2-Pin DO-7 New Jersey Semiconductor
6 1N5355B 18 V, 65 mA, 5 W glass passivated zener diode Fagor
7 1N5356B 19 V, 65 mA, 5 W glass passivated zener diode Fagor
8 1N5357B 20 V, 65 mA, 5 W glass passivated zener diode Fagor
9 2N2101 Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box New Jersey Semiconductor
10 2N2102 1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
11 2N2102 Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box New Jersey Semiconductor
12 2N4036 1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. Continental Device India Limited
13 2N4036 Trans GP BJT PNP 65V 1A 3-Pin TO-39 Box New Jersey Semiconductor
14 2N5641 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor SGS Thomson Microelectronics
15 2N5642 V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor Motorola
16 2N5642 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor SGS Thomson Microelectronics
17 2N5643 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor SGS Thomson Microelectronics
18 2N5780 Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box New Jersey Semiconductor
19 2N5781 Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box New Jersey Semiconductor
20 2N5784 Trans GP BJT NPN 65V 3.5A 3-Pin TO-39 Box New Jersey Semiconductor
21 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
22 2N6107 7A complementary silicon plastic 65W power PNP transistor Motorola
23 2N6109 7A complementary silicon plastic 65W power PNP transistor Motorola
24 2N6111 7A complementary silicon plastic 65W power PNP transistor Motorola
25 2N6288 7A complementary silicon plastic 65W power NPN transistor Motorola
26 2N6290 7A complementary silicon plastic 65W power NPN transistor Motorola
27 2N6292 7A complementary silicon plastic 65W power NPN transistor Motorola
28 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
29 2N6386 Plastic 65W medium-power NPN silicon transistor Motorola
30 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State


Datasheets found :: 1859
Page: | 1 | 2 | 3 | 4 | 5 |



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