| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6387 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
| 32 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 33 |
2N6388 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
| 34 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
| 35 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
| 36 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 37 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 38 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 39 |
2N7066 |
MOSPOWER N-Channel Enhancement Mode Transistor 5.5A 650V |
Siliconix |
| 40 |
2SK4088LS |
Power MOSFET 650V 11A 0.85 Ohm Nch Single TO-220F-3FS |
ON Semiconductor |
| 41 |
2SK4089LS |
Power MOSFET 650 V, 12 A, 720 mOhm Single N-Channel TO-220FL(LS) |
ON Semiconductor |
| 42 |
2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB |
ON Semiconductor |
| 43 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
| 44 |
5962-0150601HXA |
Dual Channel, 14-Bit, 65 MSPS A/D Converter with Analog Input Signal Conditioning |
Analog Devices |
| 45 |
5962-9961601HXA |
Dual Channel, 14-Bit, 65 MSPS A/D Converter With Analog Input Signal Conditioning |
Analog Devices |
| 46 |
5962F0151701QXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 47 |
5962F0151701QXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 48 |
5962F0151701QXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 49 |
5962F0151701QYA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 50 |
5962F0151701QYC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 51 |
5962F0151701QYX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 52 |
5962F0151701VXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 53 |
5962F0151701VXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 54 |
5962F0151701VXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 55 |
5962F0151701VYA |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 56 |
5962F0151701VYC |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 57 |
5962F0151701VYX |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 58 |
5962G0151701QXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si). |
Aeroflex Circuit Technology |
| 59 |
5962G0151701QXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si). |
Aeroflex Circuit Technology |
| 60 |
5962G0151701QXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si). |
Aeroflex Circuit Technology |
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