| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP70 |
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 2 |
15KP70A |
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 3 |
15KP70C |
Diode TVS Single Bi-Dir 70V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 4 |
15KP70CA |
Diode TVS Single Bi-Dir 70V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5 |
15KPA70 |
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 6 |
15KPA70A |
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 7 |
15KPA70C |
Diode TVS Single Bi-Dir 70V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 8 |
15KPA70CA |
Diode TVS Single Bi-Dir 70V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 9 |
1N4444 |
Diode Switching 70V 0.25A 2-Pin DO-35 |
New Jersey Semiconductor |
| 10 |
1N483 |
Diode Switching 70V 0.1A 2-Pin DO-7 |
New Jersey Semiconductor |
| 11 |
1N483A |
Diode Switching 70V 0.1A 2-Pin DO-7 |
New Jersey Semiconductor |
| 12 |
1N483B |
Diode Switching 70V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 13 |
1N483MB |
Diode Switching 70V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 14 |
1N5091 |
Zener Diode 70V 1W |
Motorola |
| 15 |
1N5091 |
Diode Zener Single 70V 5% 3W 2-Pin Case A |
New Jersey Semiconductor |
| 16 |
1N5091A |
Diode Zener Single 70V 5% 3W 2-Pin Case A |
New Jersey Semiconductor |
| 17 |
1N5123 |
Zener Diode 70V 3W |
Motorola |
| 18 |
1N5194 |
Diode Switching 70V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 19 |
1N5711 |
Diode Schottky 70V 0.015A 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N6061A |
Diode TVS Single Bi-Dir 70V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 21 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 22 |
2N4150 |
Trans GP BJT NPN 70V 10A 3-Pin TO-5 |
New Jersey Semiconductor |
| 23 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 24 |
2N5294 |
Trans GP BJT NPN 70V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 25 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 26 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 27 |
2N5496 |
Trans GP BJT NPN 70V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 28 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 29 |
2N6106 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
| 30 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
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