| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6107 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 32 |
2N6107 |
Power 7A 70V Discrete PNP |
ON Semiconductor |
| 33 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 34 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 35 |
2N6292 |
Power 7A 70V Discrete NPN |
ON Semiconductor |
| 36 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 37 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
| 38 |
2SC2098 |
Trans GP BJT NPN 70V 6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 39 |
30KP70 |
Diode TVS Single Uni-Dir 70V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 40 |
30KP70A |
Diode TVS Single Uni-Dir 70V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 41 |
30KP70C |
Diode TVS Single Bi-Dir 70V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 42 |
30KP70CA |
Diode TVS Single Bi-Dir 70V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 43 |
30KPA70 |
Diode TVS Single Uni-Dir 70V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 44 |
30KPA70A |
Diode TVS Single Uni-Dir 70V 30KW 2-Pin |
New Jersey Semiconductor |
| 45 |
30KPA70C |
Diode TVS Single Bi-Dir 70V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 46 |
30KPA70CA |
Diode TVS Single Bi-Dir 70V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 47 |
3VR70 |
3 Watt Epoxy Silicon Zener Diode 70V |
Transitron Electronic |
| 48 |
5KP70 |
Diode TVS Single Uni-Dir 70V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 49 |
5KP70A |
Diode TVS Single Uni-Dir 70V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 50 |
5KP70C |
Diode TVS Single Bi-Dir 70V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 51 |
5KP70CA |
Diode TVS Single Bi-Dir 70V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 52 |
B170 |
1A high voltage schottky barrier rectifier, 70V |
TRANSYS Electronics Limited |
| 53 |
B170B |
1A high voltage schottky barrier rectifier, 70V |
TRANSYS Electronics Limited |
| 54 |
BD182 |
Silicon N-P-N high power transistor. 70V, 117W. |
General Electric Solid State |
| 55 |
BD239A |
Trans GP BJT NPN 70V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 56 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
| 57 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 58 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 59 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
| 60 |
BDX18 |
Trans GP BJT PNP 70V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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