No. |
Part Name |
Description |
Manufacturer |
1 |
1503-80A |
Max delay 80 ns, Mechanically variable delay line |
Data Delay Devices Inc |
2 |
1503-80B |
Max delay 80 ns, Mechanically variable delay line |
Data Delay Devices Inc |
3 |
1504-80B |
Delay 80 +/-4 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
4 |
1504-80C |
Delay 80 +/-4 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
5 |
1504-80F |
Delay 80 +/-4 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
6 |
1505-80A |
Delay 80 +/-4 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
7 |
1513-80A |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
8 |
1513-80B |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
9 |
1514-80A |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
10 |
1514-80B |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
11 |
1514-80G |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
12 |
1515-80A |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
13 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
14 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
15 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
16 |
2N3700HR |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
17 |
2N3700HRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
18 |
2N3700HRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
19 |
2N3700RHRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
20 |
2N3700RHRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
21 |
2N3700RUBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
22 |
2N3700RUBT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
23 |
2N3700UB1 |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
24 |
2N3700UBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
25 |
2N3700UBT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
26 |
2N4900 |
Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. |
Motorola |
27 |
2N5153ESY1 |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
28 |
2N5153ESYHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
29 |
2N5153ESYHRT |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
30 |
2N5153HR |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
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