No. |
Part Name |
Description |
Manufacturer |
31 |
2N5153HRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
32 |
2N5153HRT |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
33 |
2N5153RESYHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
34 |
2N5153RESYHRT |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
35 |
2N5153RHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
36 |
2N5153RHRT |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
37 |
2N5153RSHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
38 |
2N5153S1 |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
39 |
2N5153SHRG |
Hi-Rel PNP bipolar transistor 80 V, 5 A |
ST Microelectronics |
40 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
41 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
42 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
43 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
44 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
45 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
46 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
47 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
48 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
49 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
50 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
51 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
52 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
53 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
54 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
55 |
2N6718 |
0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
56 |
2N6728 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
57 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
58 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
59 |
33250A |
Function / Arbitrary Waveform Generator, 80 MHz |
Agilent (Hewlett-Packard) |
60 |
5962-0053001HXA |
Dual Channel, 12-Bit, 80 MSPS A/D Converter with Analog Input Signal Conditioning |
Analog Devices |
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