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Datasheets for 80

Datasheets found :: 1131
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No. Part Name Description Manufacturer
31 2N5153HRG Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
32 2N5153HRT Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
33 2N5153RESYHRG Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
34 2N5153RESYHRT Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
35 2N5153RHRG Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
36 2N5153RHRT Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
37 2N5153RSHRG Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
38 2N5153S1 Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
39 2N5153SHRG Hi-Rel PNP bipolar transistor 80 V, 5 A ST Microelectronics
40 2N5298 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
41 2N5551 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE Continental Device India Limited
42 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
43 2N6101 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. Continental Device India Limited
44 2N6123 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
45 2N6126 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
46 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
47 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
48 2N6316 Power NPN silicon transistor. 7.0 A, 80 V, 90 W. Motorola
49 2N6318 Power PNP silicon transistor. 7.0 A, 80 V, 90 W. Motorola
50 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
51 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
52 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
53 2N6716 0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE Continental Device India Limited
54 2N6717 0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
55 2N6718 0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
56 2N6728 0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
57 2N6729 0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
58 2N6730 0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
59 33250A Function / Arbitrary Waveform Generator, 80 MHz Agilent (Hewlett-Packard)
60 5962-0053001HXA Dual Channel, 12-Bit, 80 MSPS A/D Converter with Analog Input Signal Conditioning Analog Devices


Datasheets found :: 1131
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