| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
| 2 |
15KP90 |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 3 |
15KP90A |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 4 |
15KP90C |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 5 |
15KP90CA |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 6 |
15KPA90 |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 7 |
15KPA90A |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 8 |
15KPA90C |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 9 |
15KPA90CA |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 10 |
1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) |
BKC International Electronics |
| 11 |
1N191 |
Diode Switching 90V 0.15A |
New Jersey Semiconductor |
| 12 |
1N5125 |
Zener Diode 90V 3W |
Motorola |
| 13 |
1N6064 |
Diode TVS Single Bi-Dir 90V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 14 |
1N67A |
Diode 90V 0.05A |
New Jersey Semiconductor |
| 15 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 16 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 17 |
2N2405 |
Trans GP BJT NPN 90V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 18 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 19 |
2N2896 |
Trans GP BJT NPN 90V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 20 |
2N3261 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
| 21 |
2N3262 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
| 22 |
2N3265 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
| 23 |
2N3798A |
Trans GP BJT NPN 90V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 24 |
2N5038 |
20A NPN silicon power metal transistor 90V 140W |
Motorola |
| 25 |
2N5038 |
Trans GP BJT NPN 90V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 26 |
2N5329 |
Trans GP BJT NPN 90V 20A 3-Pin TO-61 |
New Jersey Semiconductor |
| 27 |
2N5330 |
Trans GP BJT NPN 90V 30A 3-Pin TO-61 |
New Jersey Semiconductor |
| 28 |
2N5496 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
| 29 |
2N5497 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
| 30 |
2N5671 |
Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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