| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BAX12 |
Diode Switching 90V 0.4A 2-Pin ALF |
New Jersey Semiconductor |
| 62 |
BD239B |
Trans GP BJT NPN 90V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 63 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
| 64 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 65 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 66 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
| 67 |
BDY24 |
Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 68 |
BDY24A |
Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 69 |
BDY24B |
Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 70 |
BDY24C |
Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 71 |
BDY24CCLB |
Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 72 |
BDY24CLB |
Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 73 |
BUV26 |
Trans GP BJT NPN 90V 14A 3-Pin(3+Tab) TO-220 Tube |
New Jersey Semiconductor |
| 74 |
CJF2955 |
30.000W Medium Power PNP Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 75 |
CJF3055 |
30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 76 |
CPT30090 |
300A, 90V ultra fast recovery rectifier |
MCC |
| 77 |
E-STV9379A |
VERTICAL DEFLECTION BOOSTER FOR 2.6 APP MONITOR/TV APPLICATIONS WITH 90V FLYBACK GENERATOR |
ST Microelectronics |
| 78 |
EK 09 |
Schottky Barrier Diode - 90V/100V |
Sanken |
| 79 |
EK 19 |
Schottky Barrier Diode - 90V/100V |
Sanken |
| 80 |
EK09 |
Schottky Barrier Diodes 90V |
Unknow |
| 81 |
EK19 |
Schottky Barrier Diodes 90V |
Sanken |
| 82 |
FA4105A |
V(cc): 90V; BW: 150MHz; tr: 2.5ns; I(cc): 25mA; video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 83 |
FMB-29 |
Schottky Barrier Diode - 90V/100V |
Sanken |
| 84 |
FMB-29L |
Schottky Barrier Diodes 90V |
Sanken |
| 85 |
FMB-39 |
Schottky Barrier Diodes 90V |
Sanken |
| 86 |
FMB-39M |
Schottky Barrier Diodes 90V |
Sanken |
| 87 |
FMB-G19 |
Schottky Barrier Diodes 90V |
Sanken |
| 88 |
FMB-G19L |
Schottky Barrier Diode - 90V/100V |
Sanken |
| 89 |
FME-220A |
Schottky Barrier Diode - 90V/100V |
Sanken |
| 90 |
FME-230A |
Schottky Barrier Diode - 90V/100V |
Sanken |
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