| No. |
Part Name |
Description |
Manufacturer |
| 1 |
101 |
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER |
SGS Thomson Microelectronics |
| 2 |
101 |
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER |
ST Microelectronics |
| 3 |
1N286 |
Silicon Microwave X-K band Mixer NF=11.3 dB |
Motorola |
| 4 |
1N286A |
Silicon Microwave X-K band Mixer NF=11.3 dB |
Motorola |
| 5 |
1N2926 |
Microwave X-K band Detector |
Motorola |
| 6 |
1N2926A |
Microwave X-K band Detector |
Motorola |
| 7 |
1SS110 |
Silicon Epitaxial Planar Diode for Tuner Band Switch |
Hitachi Semiconductor |
| 8 |
1SS110 |
35 V, band switching diode |
Leshan Radio Company |
| 9 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 10 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 11 |
1SS265 |
35 V, band switching diode |
Leshan Radio Company |
| 12 |
1SS268 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 13 |
1SS269 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 14 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 15 |
1SS312 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 16 |
1SS313 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 17 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 18 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 19 |
1SS356 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 20 |
1SS364 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 21 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 22 |
1SS381 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 23 |
1SS390 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 24 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 25 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 26 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 27 |
1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 28 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 29 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
| 30 |
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
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