| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2D-2000M-2 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| 62 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 63 |
2N3375 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
| 64 |
2N3445 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 65 |
2N3446 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 66 |
2N3447 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 67 |
2N3448 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 68 |
2N3632 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
| 69 |
2N3733 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
| 70 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 71 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 72 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 73 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 74 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 75 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 76 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 77 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 78 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 79 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 80 |
2N5564 |
N-Channel FETs - wide band - low noise dual JFETs |
National Semiconductor |
| 81 |
2N5565 |
N-Channel FETs - wide band - low noise dual JFETs |
National Semiconductor |
| 82 |
2N5566 |
N-Channel FETs - wide band - low noise dual JFETs |
National Semiconductor |
| 83 |
2N5911 |
N-Channel FETs - wide band - low noise dual JFETs |
National Semiconductor |
| 84 |
2N5912 |
N-Channel FETs - wide band - low noise dual JFETs |
National Semiconductor |
| 85 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 86 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
| 87 |
2SC1165 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
| 88 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 89 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 90 |
2SC1765 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
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