No. |
Part Name |
Description |
Manufacturer |
1 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
2 |
2N1613 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
3 |
2N1893 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
4 |
2N2102 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
5 |
2N2405 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
6 |
2N3053 |
General purpose, medium power silicon N-P-N planar transistor. |
General Electric Solid State |
7 |
2N3053 |
MEDIUM POWER SILICON NPN PLANAR TRANSISTOR |
SemeLAB |
8 |
2N3053A |
General purpose, medium power silicon N-P-N planar transistor. |
General Electric Solid State |
9 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
10 |
2N3119 |
High-Power Silicon NPN Planar RF Tranzistor |
RCA Solid State |
11 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
12 |
2N3439 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
13 |
2N3440 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
14 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
15 |
2N3441 |
MEDIUM POWER SILICON NPN TRANSISTOR |
SemeLAB |
16 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
17 |
2N3583 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
18 |
2N3585 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
19 |
2N3714 |
80V Silicon NPN power high transistor |
MOSPEC Semiconductor |
20 |
2N3715 |
60V Silicon NPN power high transistor |
MOSPEC Semiconductor |
21 |
2N3715 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
22 |
2N3716 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
23 |
2N3733 |
10W, 400-Mc Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
24 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
25 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
26 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
27 |
2N4036 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
28 |
2N4037 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
29 |
2N4063 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
30 |
2N4064 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
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