DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SILICON N

Datasheets found :: 2283
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
92 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
93 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
94 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
95 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
96 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
97 2N6253 45V high power silicon NPN transistor Comset Semiconductors
98 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
99 2N6254 80V high power silicon NPN transistor Comset Semiconductors
100 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
101 2N6261 HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR SemeLAB
102 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
103 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
104 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
105 2N6265 2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
106 2N6266 5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor RCA Solid State
107 2N6267 10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
108 2N6268 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
109 2N6269 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
110 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
111 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
112 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
113 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
114 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
115 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
116 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
117 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
118 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
119 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
120 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation


Datasheets found :: 2283
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



© 2024 - www Datasheet Catalog com