No. |
Part Name |
Description |
Manufacturer |
1 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
2 |
27LV256-30VS |
256K (32K x 8) Low-Voltage CMOS EPROM |
Microchip |
3 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
4 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
5 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
7 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
8 |
2SAR293P5 |
PNP Middle Power Driver Transistor (-30V / -1.0A) |
ROHM |
9 |
2SAR293P5T100 |
PNP Middle Power Driver Transistor (-30V / -1.0A) |
ROHM |
10 |
2SAR512P5 |
PNP -30V -2A Medium Power Transistor |
ROHM |
11 |
2SAR512P5T100 |
PNP -30V -2A Medium Power Transistor |
ROHM |
12 |
2SAR552P5 |
PNP -30V -3A Medium Power Transistor |
ROHM |
13 |
2SAR552P5T100 |
PNP -30V -3A Medium Power Transistor |
ROHM |
14 |
2SB1708Q5 |
PNP Low V<sub>CE(sat)</sub> Transistor (-30V / -3A) |
ROHM |
15 |
2SB1708Q5TL |
PNP Low V<sub>CE(sat)</sub> Transistor (-30V / -3A) |
ROHM |
16 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
17 |
2SJ355-T1 |
P-channel MOS FET (-30V, +-2A) |
NEC |
18 |
2SJ355-T2 |
P-channel MOS FET (-30V, +-2A) |
NEC |
19 |
2SJ357-T1 |
P-channel MOS FET(-30V, +-3A) |
NEC |
20 |
2SJ357-T2 |
P-channel MOS FET(-30V, +-3A) |
NEC |
21 |
30A02CH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
22 |
30A02MH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
23 |
3LP01C |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single CP |
ON Semiconductor |
24 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
25 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
26 |
AF4407PSA |
V(ds): -30V; V(gs): +-25V; +-50A; P-channel 30-V (D-S) MOSFET |
Anachip |
27 |
AF4409PS |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
28 |
AF4409PSA |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
29 |
AF4409PSL |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
30 |
AF4409PSLA |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
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