| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AF4811PS |
V(ds): -30V; V(gs): +-20V; 8.3-9.5A; P-channel 30-V (D-S) MOSFET |
Anachip |
| 32 |
AF4811PSA |
V(ds): -30V; V(gs): +-20V; 8.3-9.5A; P-channel 30-V (D-S) MOSFET |
Anachip |
| 33 |
AF4811PSL |
V(ds): -30V; V(gs): +-20V; 8.3-9.5A; P-channel 30-V (D-S) MOSFET |
Anachip |
| 34 |
AF4811PSLA |
V(ds): -30V; V(gs): +-20V; 8.3-9.5A; P-channel 30-V (D-S) MOSFET |
Anachip |
| 35 |
AF4901PS |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 36 |
AF4901PSA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 37 |
AF4901PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 38 |
AF4901PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 39 |
AF4935PS |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 40 |
AF4935PSA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 41 |
AF4935PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 42 |
AF4935PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 43 |
AF4953PS |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 44 |
AF4953PSA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 45 |
AF4953PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 46 |
AF4953PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 47 |
AT17F040-30VJC |
FPGA configuration flash memory. Memory size 4-Mbit. |
Atmel |
| 48 |
AT17F040-30VJI |
FPGA configuration flash memory. Memory size 4-Mbit. |
Atmel |
| 49 |
ATP102 |
P-Channel Power MOSFET, -30V, -40A, 18.5mOhm, Single ATPAK |
ON Semiconductor |
| 50 |
ATP104 |
P-Channel Power MOSFET, -30V, -75A, 8.4mOhm, Single ATPAK |
ON Semiconductor |
| 51 |
AUIRF7316Q |
Automotive Q101 -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 52 |
AUIRF7316QTR |
Automotive Q101 -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 53 |
AUIRF7416Q |
Automotive Q101 -30V Single P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 54 |
AUIRF7416QTR |
Automotive Q101 -30V Single P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 55 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 56 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 57 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 58 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 59 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 60 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
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