| No. |
Part Name |
Description |
Manufacturer |
| 1 |
100322QMQB |
Low power 9- bit buffer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 2 |
100328QMQB |
Low power octal ECL/TTL bidirectional translator with latch. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 3 |
100329DMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 4 |
100329FMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 5 |
100329QMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 6 |
100331DMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 7 |
100331FMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 8 |
100331QMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 9 |
100364DMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 10 |
100364FMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 11 |
100364QMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 12 |
100371QMQB |
Low power triple 4-input multiplexer with enable. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 13 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
| 14 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 15 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 16 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 17 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 18 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 19 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 20 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 21 |
1N4001 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 50V. |
Jinan Gude Electronic Device |
| 22 |
1N4002 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 100V. |
Jinan Gude Electronic Device |
| 23 |
1N4003 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 200V. |
Jinan Gude Electronic Device |
| 24 |
1N4004 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 400V. |
Jinan Gude Electronic Device |
| 25 |
1N4005 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 600V. |
Jinan Gude Electronic Device |
| 26 |
1N4006 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 800V. |
Jinan Gude Electronic Device |
| 27 |
1N4007 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V. |
Jinan Gude Electronic Device |
| 28 |
1N4565 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. |
Motorola |
| 29 |
1N4565A |
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. |
Motorola |
| 30 |
1N4566 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
| | | |
