| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N4776A |
Low-level temperature-compensated zener reference diode. Max voltage 0.066 V. |
Motorola |
| 92 |
1N4777 |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 93 |
1N4777A |
Low-level temperature-compensated zener reference diode. Max voltage 0.026 V. |
Motorola |
| 94 |
1N4778 |
Low-level temperature-compensated zener reference diode. Max voltage 0.006 V. |
Motorola |
| 95 |
1N4778A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 96 |
1N4779 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
| 97 |
1N4779A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 98 |
1N4780 |
Low-level temperature-compensated zener reference diode. Max voltage 0.064 V. |
Motorola |
| 99 |
1N4780A |
Low-level temperature-compensated zener reference diode. Max voltage 0.132 V. |
Motorola |
| 100 |
1N4781 |
Low-level temperature-compensated zener reference diode. Max voltage 0.032 V. |
Motorola |
| 101 |
1N4781A |
Low-level temperature-compensated zener reference diode. Max voltage 0.066 V. |
Motorola |
| 102 |
1N4782 |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 103 |
1N4782A |
Low-level temperature-compensated zener reference diode. Max voltage 0.026 V. |
Motorola |
| 104 |
1N4783 |
Low-level temperature-compensated zener reference diode. Max voltage 0.006 V. |
Motorola |
| 105 |
1N4783A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 106 |
1N4784 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
| 107 |
1N4784A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 108 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
| 109 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
| 110 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
| 111 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
| 112 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
| 113 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
| 114 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 115 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 116 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 117 |
1N748 |
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). |
Fairchild Semiconductor |
| 118 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 119 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 120 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
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