| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4765A |
Low-level temperature-compensated zener reference diode. Max voltage 0.141 V. |
Motorola |
| 2 |
1N4770A |
Low-level temperature-compensated zener reference diode. Max voltage 0.141 V. |
Motorola |
| 3 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 4 |
7251 |
T-1 subminiature, miniature flanged lamp. 5.0 volts, 0.145 amps. |
Gilway Technical Lamp |
| 5 |
7269 |
T-1 subminiature, bi-pin lamp. 5.0 volts, 0.145 amps. |
Gilway Technical Lamp |
| 6 |
801 |
T-1 subminiature, wire lead lamp. 2.4 volts, 0.145 amps. |
Gilway Technical Lamp |
| 7 |
8096 |
T-1 subminiature, wire lead lamp. 5.0 volts, 0.145 amps. |
Gilway Technical Lamp |
| 8 |
ADN3000-06 |
6.144 Gbps Transimpedance Amplifier with Integrated Photodiode |
Analog Devices |
| 9 |
ADSP-2100SG_883G |
0.3-7V; speed: 6.144MHz; 12.5 MIPS microprocessor. For optimized for DSP algorithms including, digital filtering, fast fourier transforms,image processing, radar, sonar speech processing and telecommunications |
Analog Devices |
| 10 |
APT10026JFLL |
POWER MOS 7 1000V 30A 0.140 Ohm |
Advanced Power Technology |
| 11 |
APT4014BVR |
POWER MOS V 400V 28A 0.140 Ohm |
Advanced Power Technology |
| 12 |
APT4014HVR |
POWER MOS V 400V 28A 0.140 Ohm |
Advanced Power Technology |
| 13 |
APT5014B2LC |
POWER MOS VI 500V 37A 0.140 Ohm |
Advanced Power Technology |
| 14 |
APT5014B2VR |
POWER MOS V 500V 37A 0.140 Ohm |
Advanced Power Technology |
| 15 |
APT5014BFLL |
POWER MOS 7 500V 35A 0.140 Ohm |
Advanced Power Technology |
| 16 |
APT5014BLL |
POWER MOS 7 500V 35A 0.140 Ohm |
Advanced Power Technology |
| 17 |
APT5014LLC |
POWER MOS VI 500V 37A 0.140 Ohm |
Advanced Power Technology |
| 18 |
APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm |
Advanced Power Technology |
| 19 |
APT5014SFLL |
POWER MOS 7 500V 35A 0.140 Ohm |
Advanced Power Technology |
| 20 |
APT5014SLL |
POWER MOS 7 500V 35A 0.140 Ohm |
Advanced Power Technology |
| 21 |
APT8014JFLL |
POWER MOS 7 800V 42A 0.140 Ohm |
Advanced Power Technology |
| 22 |
APT8014JLL |
POWER MOS 7 800V 42A 0.140 Ohm |
Advanced Power Technology |
| 23 |
APT8014L2FLL |
POWER MOS 7 800V 52A 0.140 Ohm |
Advanced Power Technology |
| 24 |
APT8014L2LL |
POWER MOS 7 800V 52A 0.140 Ohm |
Advanced Power Technology |
| 25 |
BSP149 |
Low Voltage MOSFETs - Depletion MOSFET, 200V, SOT-223, RDSon = 3.5Ohm, 0.14A, LL |
Infineon |
| 26 |
DSC1001AE1-006.1440 |
Clock and Timing - Oscillators |
Microchip |
| 27 |
DSC1001AE1-006.1440T |
Clock and Timing - Oscillators |
Microchip |
| 28 |
DSC1001CI2-006.1400T |
Clock and Timing - Oscillators |
Microchip |
| 29 |
DSC1033DI2-006.1400T |
Clock and Timing - Oscillators |
Microchip |
| 30 |
E2502H44 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1542.14 nm. Frequency 194.4 THz. |
Agere Systems |
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