| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DSC1033DI2-006.1400T |
Clock and Timing - Oscillators |
Microchip |
| 32 |
E2502H44 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1542.14 nm. Frequency 194.4 THz. |
Agere Systems |
| 33 |
EN6446 |
P-Channel Power MOSFET, -50V, -0.14A, 23 Ohm, Dual MCPH6 |
ON Semiconductor |
| 34 |
FRF9150D |
23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs |
Intersil |
| 35 |
FRF9150H |
23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs |
Intersil |
| 36 |
FRF9150R |
23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs |
Intersil |
| 37 |
FRS140D |
17A/ 100V/ 0.145 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 38 |
FRS140H |
17A/ 100V/ 0.145 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 39 |
FRS140R |
17A/ 100V/ 0.145 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 40 |
FSF9150D |
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 41 |
FSF9150D1 |
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 42 |
FSF9150D3 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 43 |
FSF9150R |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 44 |
FSF9150R1 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 45 |
FSF9150R3 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 46 |
FSF9150R4 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 47 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
| 48 |
IRF9Z34L |
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) |
International Rectifier |
| 49 |
IRK.142 |
THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
International Rectifier |
| 50 |
IRK.142 |
THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
International Rectifier |
| 51 |
JANSR2N7403 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET |
Intersil |
| 52 |
MR3-1088 |
MR3 reflector lamp assembly. 5.0 volts, 0.140 amps. |
Gilway Technical Lamp |
| 53 |
MR4-1088 |
MR4 reflector lamp assembly. 5.0 volts, 0.140 amps. |
Gilway Technical Lamp |
| 54 |
NX8560LJ421-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1542.14 nm. Frequency 194.40 THz. FC-UPC connector. |
NEC |
| 55 |
NX8560LJ421-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1542.14 nm. Frequency 194.40 THz. SC-UPC connector. |
NEC |
| 56 |
NX8560SJ421-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.142 nm. Frequency 194.40 THz. FC-UPC connector. |
NEC |
| 57 |
NX8560SJ421-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.142 nm. Frequency 194.40 THz. SC-UPC connector. |
NEC |
| 58 |
NX8562LB421-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1542.14 nm. Frequency 194.40 THz. Anode ground. FC-PC connector. |
NEC |
| 59 |
NX8562LF421-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1542.14 nm. Frequency 194.40 THz. Anode floating. FC-PC connector. |
NEC |
| 60 |
NX8563LA421-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1542.14 nm. Frequency 194.40 THz. SC-UPC. |
NEC |
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