No. |
Part Name |
Description |
Manufacturer |
1 |
40412 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
2 |
40412 |
Medium-power silicon N-P-N planar transistor. |
General Electric Solid State |
3 |
40412 |
Silicon NPN power transistor, TO-5 package |
Silicon Transistor Corporation |
4 |
BQ500412 |
Free Positioning, Qi-Compliant Wireless Power Transmitter Manager |
Texas Instruments |
5 |
BQ500412RGZR |
Free Positioning, Qi-Compliant Wireless Power Transmitter Manager 48-VQFN -40 to 110 |
Texas Instruments |
6 |
BQ500412RGZT |
Free Positioning, Qi-Compliant Wireless Power Transmitter Manager 48-VQFN -40 to 110 |
Texas Instruments |
7 |
BZG0412 |
12V suppressor diode |
Vishay |
8 |
BZG04120 |
120V suppressor diode |
Vishay |
9 |
CX90412 |
Voice Coprocessor |
Conexant |
10 |
DS92LV0412 |
5 - 50 MHz Channel Link II Serializer/Deserializer with LVDS Parallel Interface |
Texas Instruments |
11 |
DS92LV0412SQ/NOPB |
5 - 50 MHz Channel Link II Serializer/Deserializer with LVDS Parallel Interface 48-WQFN -40 to 85 |
Texas Instruments |
12 |
DS92LV0412SQE/NOPB |
5 - 50 MHz Channel Link II Serializer/Deserializer with LVDS Parallel Interface 48-WQFN -40 to 85 |
Texas Instruments |
13 |
DS92LV0412SQX/NOPB |
5 - 50 MHz Channel Link II Serializer/Deserializer with LVDS Parallel Interface 48-WQFN -40 to 85 |
Texas Instruments |
14 |
G504120B1EB1 |
Single Phase Bridge |
Microsemi |
15 |
G504120Z1EB1 |
3 Phase Bridge |
Microsemi |
16 |
IDT79R304120J |
Integrated RIScontroller for low-cost systems |
IDT |
17 |
IDT79R304120PF |
Integrated RIScontroller for low-cost systems |
IDT |
18 |
IDT79R304125J |
Integrated RIScontroller for low-cost systems |
IDT |
19 |
IDT79R304125PF |
Integrated RIScontroller for low-cost systems |
IDT |
20 |
IDT79RV304120J |
Integrated RIScontroller for low-cost systems |
IDT |
21 |
IDT79RV304120PF |
Integrated RIScontroller for low-cost systems |
IDT |
22 |
IDT79RV304125J |
Integrated RIScontroller for low-cost systems |
IDT |
23 |
IDT79RV304125PF |
Integrated RIScontroller for low-cost systems |
IDT |
24 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
25 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
26 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
27 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
28 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
29 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
30 |
K4E640412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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