| No. |
Part Name |
Description |
Manufacturer |
| 61 |
K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 62 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 63 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 64 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 65 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 66 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 67 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 68 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 69 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 70 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 71 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 72 |
N504120B1EB1 |
Single Phase Bridge |
Microsemi |
| 73 |
N504120Z1EB1 |
3 Phase Bridge |
Microsemi |
| 74 |
PDT0412 |
Connectorized PIN Photodiodes |
Agilent (Hewlett-Packard) |
| 75 |
PDT0412-FC-A |
Connectorized PIN Photodiodes |
Agilent (Hewlett-Packard) |
| 76 |
PDT0412-ST-F |
Connectorized PIN Photodiodes |
Agilent (Hewlett-Packard) |
| 77 |
PTEA404120 |
50-W, 48-V Input, 12-V Output, Isolated DC/DC Converter |
Texas Instruments |
| 78 |
PTEA404120N2AD |
50-W, 48-V Input, 12-V Output, Isolated DC/DC Converter |
Texas Instruments |
| 79 |
PTEA404120P2AD |
50-W, 48-V Input, 12-V Output, Isolated DC/DC Converter |
Texas Instruments |
| 80 |
R204120 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 81 |
R304120 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 82 |
R504120 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 83 |
R7200412 |
General Purpose Rectifier (600-1200 Amperes Average 4400 Volts) |
Powerex Power Semiconductors |
| 84 |
R7S00412 |
400V, 1200A general purpose single diode |
Powerex Power Semiconductors |
| 85 |
R9G00412 |
400V, 1200A general purpose single diode |
Powerex Power Semiconductors |
| 86 |
R9G20412 |
Fast Recovery Rectifier (1200Amperes Average 3600 Volts) |
Powerex Power Semiconductors |
| 87 |
R9G20412CS |
400V, 1200A fast recovery single diode |
Powerex Power Semiconductors |
| 88 |
RDC1740412B |
12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters |
Analog Devices |
| 89 |
RF2360412 |
LINEAR GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 90 |
S204120 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| | | |
