| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BC850CLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 2 |
BC850CLT1 |
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) |
Motorola |
| 3 |
BC850CLT1 |
General Purpose Transistor |
ON Semiconductor |
| 4 |
BC850CLT1G |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 5 |
GM71C17400CLT-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 6 |
GM71C17400CLT-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 7 |
GM71C17400CLT-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 8 |
GM71C17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
| 9 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
| 10 |
GM71C17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
| 11 |
GM71CS17400CLT-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power |
Hynix Semiconductor |
| 12 |
GM71CS17400CLT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
| 13 |
GM71CS17400CLT-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power |
Hynix Semiconductor |
| 14 |
GM71CS17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
| 15 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
| 16 |
GM71CS17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
| 17 |
HI-15530CLT |
Manchester Encoder / Decoder |
Holt Integrated Circuits |
| 18 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 19 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 20 |
HM514260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 21 |
HM514260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 22 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 23 |
HM514400CLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 24 |
HM514400CLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 25 |
HM514800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 26 |
HM514800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 27 |
HM514800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 28 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 29 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 30 |
HM51S4260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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