No. |
Part Name |
Description |
Manufacturer |
31 |
HM51S4260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
32 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
33 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
34 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
35 |
HY57V643220CLT-47 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
36 |
HY57V643220CLT-5 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
37 |
HY57V643220CLT-55 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
38 |
HY57V643220CLT-6 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
39 |
HY57V643220CLT-7 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
40 |
HY57V643220CLT-8 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
41 |
HY57V643220CLT-P |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
42 |
HY57V643220CLT-S |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
43 |
IRU1205-30CLTR |
0.3A Fixed LDO Linear Regulator in a SOT-23 5-Leads package |
International Rectifier |
44 |
KM684000CLT-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
45 |
KM684000CLT-7L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
46 |
KM684000CLTI-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
47 |
KM684000CLTI-7L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
48 |
MGB15N40CLT4 |
Ignition IGBT 15 Amps, 410 Volts |
ON Semiconductor |
49 |
TSH70CLT |
WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER |
SGS Thomson Microelectronics |
50 |
TSH70CLT |
WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER |
ST Microelectronics |
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