| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AOB10N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 2 |
AOT10N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 3 |
AOTF10N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 4 |
AOW10N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 5 |
AOWF10N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 6 |
FDP10N60NZ |
N-Channel UniFETTM II MOSFET 600V, 10A, 750m? |
Fairchild Semiconductor |
| 7 |
FDPF10N60NZ |
N-Channel UniFETTM II MOSFET 600V, 10A, 750m? |
Fairchild Semiconductor |
| 8 |
FDPF10N60ZUT |
N-Channel UniFETTM Ultra FRFETTM MOSFET 600V, 9A, 800m? |
Fairchild Semiconductor |
| 9 |
FGP10N60UNDF |
600V, 10A, Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 10 |
FGPF10N60UNDF |
600V, 10A, Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 11 |
FQA10N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 12 |
FQB10N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 13 |
FQB10N60CTM |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 14 |
FQI10N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 15 |
FQI10N60CTU |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 16 |
FQP10N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 17 |
FQPF10N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 18 |
FQPF10N60CF |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 19 |
IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... |
Infineon |
| 20 |
IXSA10N60B2D1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 21 |
IXSP10N60B2D1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 22 |
KF10N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 23 |
KF10N60P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 24 |
MTB10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 25 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 26 |
MTB10N60E7T4 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 27 |
MTP10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 28 |
MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 29 |
MTT210N600 |
Transistor Power Block |
IPRS Baneasa |
| 30 |
NDF10N60Z |
Power MOSFET, N-Channel, 600 V, 0.75 Ω |
ON Semiconductor |
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