| No. |
Part Name |
Description |
Manufacturer |
| 61 |
SGW10N60 |
Fast IGBT in NPT-technology |
Infineon |
| 62 |
SGW10N60A |
IGBTs & DuoPacks - 10A 600V TO247AC IGBT |
Infineon |
| 63 |
SGW10N60RUF |
Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 64 |
SGW10N60RUFD |
Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 65 |
SGW10N60RUFDTM |
Discrete, Short Circuit Rated IGBT with Diode |
Fairchild Semiconductor |
| 66 |
SKB10N60A |
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT+Diode |
Infineon |
| 67 |
SKP10N60A |
IGBTs & DuoPacks - 10A 600V TO220AB IGBT+Diode |
Infineon |
| 68 |
SKW10N60A |
IGBTs & DuoPacks - 10A 600V TO247AC IGBT+Diode |
Infineon |
| 69 |
SSF10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 70 |
SSH10N60A |
BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET |
Fairchild Semiconductor |
| 71 |
SSH10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 72 |
SSI10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 73 |
SSI10N60BTU |
600V N-Channel B-FET |
Fairchild Semiconductor |
| 74 |
SSP10N60A |
600V N-Channel A-FET / Replaced by SSP10N60B |
Fairchild Semiconductor |
| 75 |
SSP10N60A |
600V N-Channel A-FET / Replaced by SSP10N60B |
Fairchild Semiconductor |
| 76 |
SSP10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 77 |
SSS10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 78 |
SSW10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 79 |
SSW10N60BTM |
600V N-Channel B-FET |
Fairchild Semiconductor |
| 80 |
STB10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 81 |
STD10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 82 |
STF10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 83 |
STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 84 |
STGB10N60L |
N-CHANNEL 10A - 600V D 2 PAK LOGIC LEVEL IGBT |
SGS Thomson Microelectronics |
| 85 |
STGP10N60 |
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT |
ST Microelectronics |
| 86 |
STGP10N60L |
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT |
SGS Thomson Microelectronics |
| 87 |
STL10N60M2 |
N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
| 88 |
STP10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 89 |
STU10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 90 |
TSM10N60CI |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
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