| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ180A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE180A |
171- 189V transient voltage suppressor |
DC Components |
| 3 |
1.5KE180A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 4 |
1.5KE180A |
Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
1.5KE180CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 6 |
15KP170 |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
| 7 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 8 |
15KP170C |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
| 9 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 10 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 11 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
| 12 |
1892 |
MATRIX SURROUND SOUND PROCESSOR WITH SOUND PROCESSOR |
NEC |
| 13 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 14 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 15 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
ST Microelectronics |
| 16 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 17 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
ST Microelectronics |
| 18 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 19 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
| 20 |
189NQ135 |
135V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 21 |
189NQ150 |
150V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 22 |
189NQ150R |
150V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 23 |
1N1189 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 24 |
1N1189 |
Silicon-Power Rectifiers |
Diotec Elektronische |
| 25 |
1N1189 |
500V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 26 |
1N1189 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 27 |
1N1189 |
Silicon Diode Rectifier, cathode connected to case, 35A 500V |
Motorola |
| 28 |
1N1189 |
Silicon Rectifier Diode |
Motorola |
| 29 |
1N1189 |
Diode Switching 500V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 30 |
1N1189 |
500 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
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