| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5189 |
RECTIFIERS MILITARY APPROVED/ 3AMP/ FAST RECOVERY |
Microsemi |
| 62 |
1N5189 |
Rectifier Diode 500V 3A |
Motorola |
| 63 |
1N5189US |
Fast Rectifier (100-500ns) |
Microsemi |
| 64 |
1S1890 |
Silicon diffused junction rectifier 1.2A 600V |
TOSHIBA |
| 65 |
1S1890-2C2 |
Rectifier stack, 600V 2.4A |
TOSHIBA |
| 66 |
1S1890-3A2 |
Rectifier stack, 600V |
TOSHIBA |
| 67 |
1S1890-4B2 |
Rectifier stack, 600V |
TOSHIBA |
| 68 |
1S1890-6A2 |
Rectifier stack, 600V |
TOSHIBA |
| 69 |
1S1891 |
Silicon diffused junction rectifier 1.2A 800V |
TOSHIBA |
| 70 |
1S1891-2C2 |
Rectifier stack, 800V 2.4A |
TOSHIBA |
| 71 |
1S1891-3A2 |
Rectifier stack, 800V |
TOSHIBA |
| 72 |
1S1891-4B2 |
Rectifier stack, 800V |
TOSHIBA |
| 73 |
1S1891-6A2 |
Rectifier stack, 800V |
TOSHIBA |
| 74 |
1S1892 |
Silicon diffused junction rectifier 1.2A 1000V |
TOSHIBA |
| 75 |
1S1892-2C2 |
Rectifier stack, 1000V 2.4A |
TOSHIBA |
| 76 |
1S1892-3A2 |
Rectifier stack, 1000V |
TOSHIBA |
| 77 |
1S1892-4B2 |
Rectifier stack, 1000V |
TOSHIBA |
| 78 |
1S1892-6A2 |
Rectifier stack, 1000V |
TOSHIBA |
| 79 |
2C1893 |
Chip Type 2C1893 Geometry 4500 Polarity NPN |
Semicoa Semiconductor |
| 80 |
2C1893 |
Chip Type 2C1893 Geometry 4500 Polarity NPN |
Semicoa Semiconductor |
| 81 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 82 |
2N1189 |
Germanium PNP Transistor |
Motorola |
| 83 |
2N189 |
Germanium PNP Transistor |
Motorola |
| 84 |
2N1890 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 85 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 86 |
2N1890 |
NPN Transistor |
Microsemi |
| 87 |
2N1890 |
Silicon NPN Transistor |
Motorola |
| 88 |
2N1890 |
Trans GP BJT NPN 60V 0.5A 3-Pin TO-5 |
New Jersey Semiconductor |
| 89 |
2N1890 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 90 |
2N1890 |
Transistor |
SGS-ATES |
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