No. |
Part Name |
Description |
Manufacturer |
1 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
2 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
3 |
2N5108 |
NPN silicon high frequency transistor 1.0W - 1GHz |
Motorola |
4 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
5 |
41024 |
1W 1GHz Silicon NPN Overlay RF Transistor |
RCA Solid State |
6 |
41025 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
7 |
41026 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
8 |
41027 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
9 |
41028 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
10 |
5962-9752001MPA |
1.1GHz Ultra Wideband Monolithic Op Amp |
National Semiconductor |
11 |
5962-9752001MPA |
1.1GHz Ultra Wideband Monolithic Op Amp |
National Semiconductor |
12 |
ABA3100 |
1GHz Balanced Low Noise Linear Amplifier |
Skyworks Solutions |
13 |
ABA3100RS3P1 |
1GHz Balanced Low Noise Linear Amplifier |
Skyworks Solutions |
14 |
ABA3100S3P0 |
1GHz Balanced Low Noise Linear Amplifier |
Skyworks Solutions |
15 |
ABA3100S3TR |
1GHz Balanced Low Noise Linear Amplifier |
Skyworks Solutions |
16 |
ADG918BCP |
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches |
Analog Devices |
17 |
ADG919BCP |
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches |
Analog Devices |
18 |
ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications |
Analog Devices |
19 |
ADSP-BF608 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for VGA Video Analytics |
Analog Devices |
20 |
ADSP-BF609 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for HD Video Analytics |
Analog Devices |
21 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
22 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
23 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
24 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
25 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
26 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
27 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
28 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
29 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
30 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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