| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BF479 |
Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz |
SGS-ATES |
| 32 |
BF516 |
Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz |
SGS-ATES |
| 33 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 34 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 35 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 36 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 37 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 38 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 39 |
BFS17 |
NPN 1GHz wideband transistor |
NXP Semiconductors |
| 40 |
BFS17P |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 41 |
BFS17S |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 42 |
BFS17W |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 43 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 44 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 45 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 46 |
CC1100E |
Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands |
Texas Instruments |
| 47 |
CC1100ERGPR |
Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 |
Texas Instruments |
| 48 |
CC1100ERGPT |
Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 |
Texas Instruments |
| 49 |
CC1101 |
Low-Power Sub-1GHz RF Transceiver |
Texas Instruments |
| 50 |
CC1101RGP |
Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 |
Texas Instruments |
| 51 |
CC1101RGPR |
Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 |
Texas Instruments |
| 52 |
CC1101RGPT |
Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 |
Texas Instruments |
| 53 |
CC1110F16 |
Sub-1GHz System-on-Chip with MCU and 16kB Flash memory |
Texas Instruments |
| 54 |
CC1110F32 |
Sub-1GHz System-on-Chip with MCU and 32kB Flash memory |
Texas Instruments |
| 55 |
CC1110F8 |
Sub-1GHz System-on-Chip with MCU and 8kB Flash memory |
Texas Instruments |
| 56 |
CC1111F16 |
Sub-1GHz System-on-Chip with MCU, 16kB Flash memory and USB 2.0 |
Texas Instruments |
| 57 |
CC1111F32 |
Sub-1GHz System-on-Chip with MCU, 32kB Flash memory and USB 2.0 |
Texas Instruments |
| 58 |
CC1111F8 |
Sub-1GHz System-on-Chip with MCU, 8kB Flash memory and USB 2.0 |
Texas Instruments |
| 59 |
CHA2069 |
18-31GHz Low Noise Amplifier |
United Monolithic Semiconductors |
| 60 |
CHA2069-99F/00 |
18-31GHz Low Noise Amplifier |
United Monolithic Semiconductors |
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