DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 1GHZ

Datasheets found :: 296
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
32 BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
33 BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
34 BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
35 BF2040W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
36 BF479 Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz SGS-ATES
37 BF516 Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz SGS-ATES
38 BFP90A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
39 BFP91A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
40 BFP96 NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
41 BFR38 Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz SGS-ATES
42 BFR99 Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz SGS-ATES
43 BFR99A Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz SGS-ATES
44 BFS17 NPN 1GHz wideband transistor NXP Semiconductors
45 BFS17P NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
46 BFS17S NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
47 BFS17W NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Siemens
48 BFW92 Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz SGS-ATES
49 BFX89 Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz SGS-ATES
50 BFY90 Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz SGS-ATES
51 CC1100E Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands Texas Instruments
52 CC1100ERGPR Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Texas Instruments
53 CC1100ERGPT Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Texas Instruments
54 CC1101 Low-Power Sub-1GHz RF Transceiver Texas Instruments
55 CC1101RGP Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 Texas Instruments
56 CC1101RGPR Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 Texas Instruments
57 CC1101RGPT Low-Power Sub-1GHz RF Transceiver 20-QFN -40 to 85 Texas Instruments
58 CC1110F16 Sub-1GHz System-on-Chip with MCU and 16kB Flash memory Texas Instruments
59 CC1110F32 Sub-1GHz System-on-Chip with MCU and 32kB Flash memory Texas Instruments
60 CC1110F8 Sub-1GHz System-on-Chip with MCU and 8kB Flash memory Texas Instruments


Datasheets found :: 296
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



© 2024 - www Datasheet Catalog com