No. |
Part Name |
Description |
Manufacturer |
1 |
10YXF2200MXX |
(YXF Series) Miniature Aluminum Electrolytic Capacitors |
Rubycon |
2 |
1200MC |
Mating Connector |
Burr Brown |
3 |
16SVPK1200M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SVPK |
Panasonic |
4 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
5 |
200MT40KB |
400V 3 Phase Bridge in a INT-A-Pak package |
International Rectifier |
6 |
232B |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
7 |
232E |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
8 |
2731GN-200M |
GaN Transistors |
Microsemi |
9 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
10 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
11 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
12 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
13 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
14 |
2N4123 |
Ic=200mA, Vce=1.0V transistor |
MCC |
15 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
16 |
2N4124 |
Ic=200mA, Vce=1.0V transistor |
MCC |
17 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
18 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
19 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
20 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
21 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
22 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
23 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
24 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
25 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
26 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
27 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
28 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
29 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
30 |
2SVPE1200M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SVPE |
Panasonic |
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