| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2U3836E18QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 32 |
2U3836J25QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 33 |
2U3836K33QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 34 |
2U3836L30QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 35 |
2U3837L30QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 36 |
2U3838E18QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 37 |
2U3838J25QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 38 |
2U3838K33QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 39 |
2U3838L30QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
| 40 |
422B |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems |
Protek Devices |
| 41 |
422E |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems |
Protek Devices |
| 42 |
422ELC |
Max voltage:30V; 200mA; digital data process data line protector. For digital process control loop, long line digital systems, digital transmission, telemetry systems |
Protek Devices |
| 43 |
4E200M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 44 |
4E200M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 45 |
4SEP1200M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEP |
Panasonic |
| 46 |
4SEQP1200M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEQP |
Panasonic |
| 47 |
4SVP1200M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SVP |
Panasonic |
| 48 |
4SVPC1200M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SVPC |
Panasonic |
| 49 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 50 |
516D335M200MM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 51 |
516D475M200MM6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
| 52 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 53 |
5IMP6-1515-7 |
Input voltage range:4.5-5.5V output voltage +/-15V (+/-200mA) DC/DC converter |
Power-One |
| 54 |
A43L8316AV-5 |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 55 |
ACDST-70-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 56 |
ACDST-99-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 57 |
ACDST6-4448TI-G |
Switching Diodes Array, VRRM=75V, VR=75V, PD=200mW, IF=100mA |
Comchip Technology |
| 58 |
ACDSV6-4448TI-G |
Switching Diodes Array, VRRM=80V, VR=80V, PD=200mW, IF=100mA |
Comchip Technology |
| 59 |
ACDSW21-G |
Small Signal Switching Diodes, VRRM=200V, VR=200V, PD=250mW, IF=200mA |
Comchip Technology |
| 60 |
AD8129 |
Low-Cost 200MHz Differential Receiver Amplifier |
Analog Devices |
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