| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5254D |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
| 2 |
1N5254D |
Diode Zener Single 27V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 3 |
1N5254D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 4 |
1N5254D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
1N5254DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1N5254DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
74ACT16254DGGR |
16-Bit Address/Data Multiplexers With 3-State Outputs 64-TSSOP -40 to 85 |
Texas Instruments |
| 8 |
D254D |
1 AND-NOR gate with 3 x 2 and 1 x 3 inputs, TTL fast series, possibly equivalent SN74H54N |
RFT |
| 9 |
DS3254DK |
Quad DS3/E3/STS-1 LIU Demo Kit |
MAXIM - Dallas Semiconductor |
| 10 |
FRF254D |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 11 |
FRK254D |
20A/ 250V/ 0.170 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 12 |
FSF254D |
18A/ 250V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 13 |
FSF254D1 |
18A/ 250V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 14 |
FSF254D3 |
18A/ 250V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 15 |
FSYA254D |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 16 |
FSYA254D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 17 |
FSYA254D3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 18 |
INS8254D |
7 V, N-channel bit programmable peripheral unterface |
National Semiconductor |
| 19 |
KM416C254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 20 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 21 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 22 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 23 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
| 24 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 25 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
| 26 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 27 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 28 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 29 |
KM416C254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
| 30 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
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