| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KM416C254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
| 32 |
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 33 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 34 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 35 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 36 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 37 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 38 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 39 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 40 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 41 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 42 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 43 |
KM416V254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 44 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 45 |
M463S3254DK1 |
32Mx64 SDRAM �SODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 46 |
M464S3254DTS |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 47 |
M464S3254DTS-L1H/C1H |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 48 |
M464S3254DTS-L1L/C1L |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 49 |
M464S3254DTS-L7A/C7A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 50 |
M464S3254DTS-L7C/C7C |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
| 51 |
MQ1N5254D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 52 |
MQ1N5254DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 53 |
MSP1N5254D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 54 |
MSP1N5254DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 55 |
MV1N5254D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 56 |
MV1N5254DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 57 |
MX1N5254D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 58 |
MX1N5254DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 59 |
SZ254D |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 60 |
ZLNB254DEETA |
Dual DiSEqC Interface IC |
Diodes |
| | | |
