| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1832FT |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2 |
2SC5322FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3 |
5962FTBD01QYA |
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
| 4 |
5962FTBD01QYC |
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
| 5 |
5962FTBD01QYX |
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
| 6 |
5962FTBD01VYA |
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
| 7 |
5962FTBD01VYC |
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
| 8 |
5962FTBD01VYX |
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
| 9 |
71M6542FT |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 10 |
71M6542FT-IGT/F |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 11 |
71M6542FT-IGTR/F |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 12 |
74VHC32FT |
74VHC CMOS logic IC series |
TOSHIBA |
| 13 |
CBL-2FT-NMNM |
Coaxial-Flex Test Cables 50 DC to 18 GHz |
Mini-Circuits |
| 14 |
CBL-2FT-SMNM |
Coaxial-Flex Test Cables 50 DC to 18 GHz |
Mini-Circuits |
| 15 |
CBL-2FT-SMSM |
Coaxial-Flex Test Cables 50 DC to 18 GHz |
Mini-Circuits |
| 16 |
CY2292FT |
Three-PLL General-Purpose EPROM Programmable Clock Generator |
Cypress |
| 17 |
HD404392FT |
ROM: 2.048 words; RAM: 256; ; 4-bit microcomputer |
Hitachi Semiconductor |
| 18 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 19 |
HN9C22FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 20 |
KSA992FTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 21 |
KSC5042FTU |
NPN Triple Diffused Planar Silicon Transistor |
Fairchild Semiconductor |
| 22 |
LTI1402FT |
200 V single phase bridge 20-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 23 |
LTI202FTD |
200 V doubler 10-12.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 24 |
LTI202FTN |
200 V negative center tap 20-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 25 |
LTI202FTP |
200 V positive center tap 20-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 26 |
LTI602FT |
200 V three phase bridge 30-40 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 27 |
M58WR032FT |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 28 |
M58WR032FT60ZB6 |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 29 |
M58WR032FT60ZB6E |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 30 |
M58WR032FT60ZB6F |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| | | |
