| No. |
Part Name |
Description |
Manufacturer |
| 31 |
M58WR032FT60ZB6F |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 32 |
M58WR032FT60ZB6T |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 33 |
M58WR032FT70ZB6 |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 34 |
M58WR032FT70ZB6E |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 35 |
M58WR032FT70ZB6F |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 36 |
M58WR032FT70ZB6T |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 37 |
M58WR032FT80ZB6 |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 38 |
M58WR032FT80ZB6E |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 39 |
M58WR032FT80ZB6F |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 40 |
M58WR032FT80ZB6T |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
| 41 |
MAX17502FTEVKIT |
Evaluation Kit for the MAX17502F |
MAXIM - Dallas Semiconductor |
| 42 |
MAX17502FTEVKIT# |
Evaluation Kit for the MAX17502F |
MAXIM - Dallas Semiconductor |
| 43 |
MC33592FTA |
PLL Tuned UHF Receiver for Data Transfer Applications |
Motorola |
| 44 |
MC44722FT |
NTSC Digital Video Encoder |
Motorola |
| 45 |
MN371132FT |
Image Pickup Devices |
Panasonic |
| 46 |
MN372132FT |
Image Pickup Devices |
Panasonic |
| 47 |
MN37242FT |
Image Pickup Devices |
Panasonic |
| 48 |
MN39242FT |
Image Sensor - Video Cameras |
Panasonic |
| 49 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 50 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 51 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 52 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 53 |
P89LPC9102FTK |
8-bit microcontrollers with accelerated two-clock 80C51 core 1 kB 3 V byte-erasable Flash with 8-bit A/D converter |
Philips |
| 54 |
P89LPC9102FTK |
P89LPC9102/9103/9107; 8-bit microcontrollers with accelerated two-clock 80C51 core 1 kB 3 V byte-erasable Flash with 8-bit A/D converter |
Philips |
| 55 |
RN1102FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 56 |
RN1112FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 57 |
RN2102FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 58 |
RN2112FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 59 |
S12FTS128KV2 |
MC9S12DT128 Device User Guide V02.09 |
Motorola |
| 60 |
S12FTS128KV2D |
MC9S12DT128 Device User Guide V02.09 |
Motorola |
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