| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HYB3117800BSJ-50 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 2 |
HYB3117800BSJ-60 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 3 |
HYB3117805BSJ-50 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 4 |
HYB3117805BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 5 |
HYB3117805BSJ-50 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
| 6 |
HYB3117805BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 7 |
HYB3117805BSJ-60 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
| 8 |
HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 9 |
HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 10 |
HYB5117800BSJ-50 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 11 |
HYB5117800BSJ-60 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 12 |
HYB5117805BJ-50 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 13 |
HYB5117805BJ-60 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 14 |
HYB5117805BJ-70 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 15 |
HYB5117805BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 16 |
HYB5117805BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
| 17 |
HYB5117805BSJ-50 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
| 18 |
HYB5117805BSJ-50-60 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
| 19 |
HYB5117805BSJ-60 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
| 20 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 21 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 22 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 23 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 24 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 25 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 26 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 27 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 28 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 29 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 30 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
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