Datasheets for 2K RE

Datasheets found :: 67 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
31	K4F160412D-F	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.	Samsung Electronic
32	K4F160811D-B	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung Electronic
33	K4F160811D-F	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung Electronic
34	K4F160812D-B	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.	Samsung Electronic
35	K4F160812D-F	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.	Samsung Electronic
36	KMM372C213CK	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V	Samsung Electronic
37	KMM372C213CS	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V	Samsung Electronic
38	KMM372C400CK	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V	Samsung Electronic
39	KMM372C400CS	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V	Samsung Electronic
40	KMM372C410CK	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V	Samsung Electronic
41	KMM372C410CS	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V	Samsung Electronic
42	KMM372F213CK	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V	Samsung Electronic
43	KMM372F213CS	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V	Samsung Electronic
44	KMM372F400CK	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
45	KMM372F400CS	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
46	KMM372F410CK	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
47	KMM372F410CS	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
48	KMM372V213CK	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V	Samsung Electronic
49	KMM372V213CS	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V	Samsung Electronic
50	KMM372V400CK	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
51	KMM372V400CS	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
52	KMM372V410CK	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
53	KMM372V410CS	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V	Samsung Electronic
54	KMM372V413CK	4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V	Samsung Electronic
55	KMM372V413CS	4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V	Samsung Electronic
56	NTE2417	Silicon complementary PNP transistor. Digital w/2 built-in bias 22k resistors (surface mount).	NTE Electronics
57	V54C316162VC	200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16	Mosel Vitelic Corp
58	V54C316162VC-5	200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16	Mosel Vitelic Corp
59	V54C316162VC-55	200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16	Mosel Vitelic Corp
60	V54C316162VC-6	200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16	Mosel Vitelic Corp

Datasheets found :: 67 Page: | 1 | 2 | 3 |