| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2 |
2N651 |
Germanium PNP Transistor |
Motorola |
| 3 |
2N651 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
| 4 |
2N6510 |
Trans GP BJT NPN 200V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
2N6510 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 6 |
2N6511 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 7 |
2N6511 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 8 |
2N6511 |
Bipolar NPN Device |
SemeLAB |
| 9 |
2N6512 |
Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 10 |
2N6512 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 11 |
2N6512 |
Bipolar NPN Device |
SemeLAB |
| 12 |
2N6513 |
Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13 |
2N6513 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 14 |
2N6514 |
Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 15 |
2N6514 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 16 |
2N6515 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 17 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 18 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 19 |
2N6515 |
Ic=500mA, Vce=10V transistor |
MCC |
| 20 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 21 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 22 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 23 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 24 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| 25 |
2N6516 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 26 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 27 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 28 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 29 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 30 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
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