Datasheets for 2N651

Datasheets found :: 66 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
31	2N6517	0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE	Continental Device India Limited
32	2N6517	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
33	2N6517	Ic=500mA, Vce=10V transistor	MCC
34	2N6517	High Voltage Transistor 625mW	Micro Commercial Components
35	2N6517	High Voltage Transistors	ON Semiconductor
36	2N6517	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
37	2N6517	High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
38	2N6517	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR	Zetex Semiconductors
39	2N6517BU	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
40	2N6517CBU	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
41	2N6517CTA	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
42	2N6517RLRA	High Voltage Transistors	ON Semiconductor
43	2N6517RLRP	High Voltage Transistors	ON Semiconductor
44	2N6517TA	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
45	2N6518	Leaded Small Signal Transistor General Purpose	Central Semiconductor
46	2N6518	PNP Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
47	2N6518	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
48	2N6518	High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.	USHA India LTD
49	2N6518BU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
50	2N6518TA	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
51	2N6519	Leaded Small Signal Transistor General Purpose	Central Semiconductor
52	2N6519	0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE	Continental Device India Limited
53	2N6519	PNP Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
54	2N6519	Ic=500mA, Vce=10V transistor	MCC
55	2N6519	High Voltage Transistor 625mW	Micro Commercial Components
56	2N6519	High Voltage Transistors	ON Semiconductor
57	2N6519	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
58	2N6519	High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W.	USHA India LTD
59	2N6519BU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
60	2N6519RLRA	High Voltage Transistors	ON Semiconductor

Datasheets found :: 66 Page: | 1 | 2 | 3 |