| No. |
Part Name |
Description |
Manufacturer |
| 1 |
100302SC |
Low Power Quint 2-Input OR/NOR Gate |
Fairchild Semiconductor |
| 2 |
100302SCX |
Low Power Quint 2-Input OR/NOR Gate |
Fairchild Semiconductor |
| 3 |
22SC5405 |
Silicon NPN triple diffusion planar type |
Panasonic |
| 4 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 5 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 6 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 7 |
24C02SC-S |
24C01C-P24C01C-IP24C01C-EP24C01C-SN24C01C-ISN24C01C-ESN24C01C-ST24C01C-IST24C01C-EST |
Microchip |
| 8 |
24C02SC-S08 |
24C01C-P24C01C-IP24C01C-EP24C01C-SN24C01C-ISN24C01C-ESN24C01C-ST24C01C-IST24C01C-EST |
Microchip |
| 9 |
24C02SC-W |
24C01C-P24C01C-IP24C01C-EP24C01C-SN24C01C-ISN24C01C-ESN24C01C-ST24C01C-IST24C01C-EST |
Microchip |
| 10 |
24C02SC-W08 |
24C01C-P24C01C-IP24C01C-EP24C01C-SN24C01C-ISN24C01C-ESN24C01C-ST24C01C-IST24C01C-EST |
Microchip |
| 11 |
24C02SC-WF |
24C01C-P24C01C-IP24C01C-EP24C01C-SN24C01C-ISN24C01C-ESN24C01C-ST24C01C-IST24C01C-EST |
Microchip |
| 12 |
24C02SC-WF08 |
24C01C-P24C01C-IP24C01C-EP24C01C-SN24C01C-ISN24C01C-ESN24C01C-ST24C01C-IST24C01C-EST |
Microchip |
| 13 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 14 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 15 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 16 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 17 |
2SA1141 |
2SA1141 2SC2681 |
Unknow |
| 18 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
| 19 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 20 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 21 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 22 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 23 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 24 |
2SA1747 |
Transistor - Silicon PNP Epitaxial Planar Type - Complementary pair with 2SC4561 |
Panasonic |
| 25 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 26 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 27 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 28 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
| 29 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
| 30 |
2SA561 |
Silicon PNP epitaxial planar transistor, complementary to 2SC734 |
TOSHIBA |
| | | |
