No. |
Part Name |
Description |
Manufacturer |
31 |
2SA661 |
Silicon PNP epitaxial planar transistor, complementary to 2SC1166 |
TOSHIBA |
32 |
2SA940 |
Silicon PNP triple diffused power transistor, complementary to 2SC2073 |
TOSHIBA |
33 |
2SA962A |
Silicon PNP epitaxial power transistor, complementary 2SC2194A |
TOSHIBA |
34 |
2SA968 |
Silicon PNP epitaxial power transistor, complementary 2SC2238 |
TOSHIBA |
35 |
2SA969A |
Silicon PNP epitaxial power transistor, complementary 2SC2238A |
TOSHIBA |
36 |
2SB977 |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
37 |
2SB977A |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
38 |
2SC0828 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
39 |
2SC0828A |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
40 |
2SC0829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
41 |
2SC1000 |
Audio Frequency Transistor |
TOSHIBA |
42 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
43 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
44 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
45 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
46 |
2SC1004 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
47 |
2SC1004 |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
48 |
2SC1004A |
Audio Frequency Transistor |
TOSHIBA |
49 |
2SC1004A |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
50 |
2SC1008 |
TRANSISTOR NPN |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
51 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
52 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
53 |
2SC1008-G |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
54 |
2SC1008-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
55 |
2SC1008-R |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
56 |
2SC1008-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
57 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
58 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
59 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
60 |
2SC1009A-L |
Silicon transistor |
NEC |
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