| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5962-8983901RA |
High performance E2CMOS PLD generic array logic, 30ns |
Lattice Semiconductor |
| 2 |
ACT15530NS |
CMOS Manchester Encoder / Decoder |
Aeroflex Circuit Technology |
| 3 |
AF6930NS |
N-Channel Enhancement Mode Power MOSFET |
Anachip |
| 4 |
AF6930NSA |
N-Channel Enhancement Mode Power MOSFET |
Anachip |
| 5 |
AF6930NSL |
N-Channel Enhancement Mode Power MOSFET |
Anachip |
| 6 |
AF6930NSLA |
N-Channel Enhancement Mode Power MOSFET |
Anachip |
| 7 |
AS4C256K16E0-30JC |
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time |
Alliance Semiconductor |
| 8 |
AS4C256K16F0-30JC |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time |
Alliance Semiconductor |
| 9 |
AS4C256K16F0-30JI |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time |
Alliance Semiconductor |
| 10 |
AS4C256K16F0-30TC |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time |
Alliance Semiconductor |
| 11 |
AS4C256K16F0-30TI |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time |
Alliance Semiconductor |
| 12 |
CD74HC30NSR |
High Speed CMOS Logic 8-Input NAND Gate |
Texas Instruments |
| 13 |
DS1100LU-30 |
3.3V 5-tap economy timing element (delay line), 30ns |
Dallas Semiconductor |
| 14 |
DS1100LZ-30 |
3.3V 5-tap economy timing element (delay line), 30ns |
Dallas Semiconductor |
| 15 |
DS1100M-30 |
5-tap economy timing element (delay line), 30ns |
Dallas Semiconductor |
| 16 |
DS1100U-30 |
5-tap economy timing element (delay line), 30ns |
Dallas Semiconductor |
| 17 |
DS1100Z-30 |
5-tap economy timing element (delay line), 30ns |
Dallas Semiconductor |
| 18 |
GAL16V8D-30LD_883 |
High performance E2CMOS PLD generic array logic, 30ns |
Lattice Semiconductor |
| 19 |
GLT41016-30J4 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 20 |
GLT41016-30TC |
30ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 21 |
GLT41116-30J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 22 |
GLT41116-30TC |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 23 |
GLT41216-30J4 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 24 |
GLT41216-30TC |
30ns; 64K x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 25 |
GLT41316-30J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 26 |
GLT41316-30TC |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 27 |
GLT44016-30J4 |
30ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 28 |
GLT44016-30TC |
30ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 29 |
GUR5H60 |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Voltage 600V, Reverse Recovery Time 30ns |
Vishay |
| 30 |
GURB5H60 |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Voltage 600V, Reverse Recovery Time 30ns |
Vishay |
| | | |
